The band gap of SnSe 2 can be tuned from bulk to few-layer thin films with a wide electromagnetic spectrum range (from 1–2 eV). 6, to occur at M and the fundamental band gap of 2.25 eV is between the VBM at Γ and the CBM at L. The valence band is found to be composed of a mixture of S 3p and Sn 5s, while the conduction band consists of a … The Esaki diodes were realized in vdW heterostructures made of black phosphorus (BP) and tin diselenide (SnSe2), two layered semiconductors that possess a broken-gap energy band … The direct band gap of 2.77 eV can be seen, in Fig. The structure is two-dimensional and consists of one SnSe2 sheet oriented in the (0, 0, 1) direction. The band offset from SnSe2 Fermi level to Al2O3 conduction band minimum is found to be 3.3±0.05 eV and SnSe2 is seen to have a high level of intrinsic electron (n-type) doping with the Fermi level positioned at about 0.2 eV above its conduction band minimum. buffer layer. The X-ray diffraction study reveals that as deposited films (SnSe) have orthorhombic crystal structure while the annealed films (SnSe 2) have hexagonal structure. because of its appropriate indirect band gap (theoretical value of 0.71 eV in bulk material and 0.969 eV monolayer material). All Sn–Se bond lengths are 2.75 Å. Se2- is bonded in a distorted T-shaped geometry to three equivalent Sn4+ atoms. We note that, 1T-ZrS 2 monolayer is an indirect gap (1.1 eV) semiconductor ,while 2H-MoSe 2 and 2H-WSe 2 monolayers have direct wide band gaps of 1.44 eV and 1.56 eV, respectively . The shift in absorption spectra was observed on SnSe 2 films from UV studies. The energy band alignment changes from a staggered gap band offset (type‐II) to a broken gap (type‐III) when changing the negative back‐gate voltage to positive, resulting in the device operating as a rectifier diode (rectification ratio ~10 4) or an n‐type tunneling field effect transistor, respectively. The optical band gap values of SnSe 2 and … In this article, we prepared a thin layer of SnSe 2 by electrochemical methods and detected its nonlinear optical characteristics. Tin selenide multilayer thin films were prepared by successive evaporation of tin and selenium layers. Moreover, both Sn and Se elements are earth-abundant and environmentally friendly, which further makes 2D SnSe2 a potential candidate for optoelectronics. A band gap is the distance between the valence band of electrons and the conduction band.Essentially, the band gap represents the minimum energy that is required to excite an electron up to a state in the conduction band where it can participate in conduction. Its thickness can be controlled to keep it on the desired band gap. A valence band offset of 0.8 eV, matches the energy gap of SnSe 2 in such a way that the VB edge of WSe 2 and the CB edge of SnSe 2 are lined up, making this materials combination suitable for (nearly) broken gap 2D-2D TFETs. SnSe2 is trigonal omega structured and crystallizes in the trigonal P-3m1 space group. Sn4+ is bonded to six equivalent Se2- atoms to form edge-sharing SnSe6 octahedra. Two-dimensional SnSe 2 has obvious adjustable band gap characteristics. Doping is a vitally important technique that can be used to modulate the properties of two‐dimensional materials. The optical constants n and ? of crystalline C6, n-type SnSe2, at 290 and 77 ?K, have been measured over the photon energy range 0?05-3?7 ev. Here, we present the first demonstration of an important building block in vdW solids: room temperature Esaki tunnel diodes. The calculated gap is in good agreement with the previous calculated result (0.8 eV) , and it is a little larger than the bulk value of 0.71 eV . 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